Contracts › 80GRC025P0002
80GRC025P0002: Requirement to Procure a Large Quantity of Custom Gallium Nitride (GAN) Schottky Diodes With Cutting Edge Capabilities Only Possible to Be Made at the Most Advanced Gan Foundries.
Awarded to Raytheon Company by National Aeronautics and Space Administration.
$941Kobligated
$1.0Mpotential value
31 October 2027current end date
See modifications, all subcontractors and funding in FedSift →
| Contract | 80GRC025P0002 |
|---|---|
| Awardee | Raytheon Company |
| Awarding agency | National Aeronautics and Space Administration |
| Awarding office | NASA GLENN RESEARCH CENTER |
| NAICS | 334413 Semiconductor and Related Device Manufacturing |
| PSC | 5961 Semiconductor Devices and Associated Hardware |
| Place of performance | MA |
| Offers received | 1 |
| Period of performance | 01 October 2025 to 31 October 2027 |
| Potential end | 31 October 2027 |
| Estimated recompete solicitation | ~Q2 2027 (estimate, ~6 months before expiry) |
Source: USASpending.gov (FPDS), public federal procurement data, as the agency reported it. Our record updated 14 October 2026. The solicitation date is an estimate from the end date, not a posted date.
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